Spin relaxation in low-dimensional systems

Authors
Citation
L. Vina, Spin relaxation in low-dimensional systems, J PHYS-COND, 11(31), 1999, pp. 5929-5952
Citations number
129
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
31
Year of publication
1999
Pages
5929 - 5952
Database
ISI
SICI code
0953-8984(19990809)11:31<5929:SRILS>2.0.ZU;2-F
Abstract
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. For intrinsic wells, whose optical p roperties are dominated by excitonic effects,, we show that exciton-exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors. For doped wells, the two spin components of an optically cr eated two-dimensional electron gas are well described by Fermi-Dirac distri butions with a common temperature but different chemical potentials. The ra te of the spin depolarization of the electron gas is found to be independen t of the mean electron kinetic energy but accelerated by thermal spreading of the carriers.