Modelling the electric potential distribution in the dark in nanoporous semiconductor electrodes

Citation
J. Bisquert et al., Modelling the electric potential distribution in the dark in nanoporous semiconductor electrodes, J SOL ST EL, 3(6), 1999, pp. 337-347
Citations number
26
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF SOLID STATE ELECTROCHEMISTRY
ISSN journal
14328488 → ACNP
Volume
3
Issue
6
Year of publication
1999
Pages
337 - 347
Database
ISI
SICI code
1432-8488(199908)3:6<337:MTEPDI>2.0.ZU;2-I
Abstract
This study concerns the electric potential distribution in the dark in nano crystalline porous semiconductor electrodes, in full depletion conditions. Since band bending in a single colloidal particle is small, the idea is to develop a model that accounts for the total potential drop resulting from t he equilibration between the Fermi level and the redox potential in the sol ution. As preliminary steps, the band bending and potential distribution in a planar electrode and also in a colloidal semiconductor particle are revi ewed. In order to overcome the limitations of results based on these geomet ries, a model based on a columnar shape is developed. The Poisson equation is solved in the columnar electrode. with careful consideration of the boun dary conditions. A large potential drop is shown to take place at the back contact. To complete the study, the effect of the depletion zone in the tra nsparent conducting oxide is analysed. Simple expressions are derived that permit evaluation of how the total potential drop is distributed between th e electrode and the substrate. From this, the strength and spatial range of the electric field in the electrode can be estimated.