Pw. Gilberd et al., TEM AND IBA STUDY OF THE THERMAL-OXIDATION OF V FOLLOWING HIGH-DOSE HE IMPLANTATION, Journal of nuclear materials, 244(1), 1997, pp. 51-58
Citations number
29
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
High dose He implantation in V can lead to the formation of He bubble
arrays with high cavity volume fractions. These structures, which are
of interest in relation to applications such as catalysis, are charact
erized by nanoscale cavities of uniform size separated by microscopica
lly thin metal walls. The oxidation of such structures with volume fra
ctions of approximately 20%, is investigated. High levels of lateral s
tress are evident in the implanted V specimens, A combination of TEM a
nd IBA is used to show that when such structures are thermally oxidize
d in flowing oxygen at temperatures up to 400 degrees C: (i) an abrupt
interface is maintained between the growing oxide layer and the under
lying V (which is also the case for compact V); (ii) the underlying bu
bble structure is preserved; (iii) unexpectedly, the oxygen uptake is
slightly inhibited compared with that for compact V, and; (iv) the for
mation of V2O5 is favored over V3O7 when compared with compact V.