Rapid thermal annealing effects on atomic layer epitaxially grown Zns : Mnthin films

ZnS:Mn thin films were coated on transparent conducting layer indium tin ox ide (ITO) 2x2 in, glass substrates by an atomic layer epitaxy process. Graz ing-angle X-ray diffraction on thin films shows a phase-pure ZnS with a wur tzite structure oriented along the 002 direction. Photoluminescence and CL measurements were carried out on the films. The emission from ZnS:Mn thin f ilms consists of two strong bands at 515 and 452 nm with an excitation band at 329 nm. For improved bright ness, the samples were annealed in a rapid thermal annealing furnace under different gas atmospheres (N-2, O-2 and for ming gas) so that the green emission was increased. The green emission is d ue to donar-acceptor combination. Promising results were obtained when the thin films were annealed in forming gas at 600 degrees C for one minute. Sc anning electron microscope micrographs showed that the particles are well c rystallized, with a grain size of 0.3-0.5 mu m This paper reports the parti cle size and morphology on the luminescent characteristics of a Mn2+ center in ZnS thin films.