Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

Completely (001)-oriented Pb(Zr0.52Ti0.48)O-3 (PZT) films up to similar to 10 mu m thick, deposited on (100) silicon wafers with Y-stabilized ZrO2 (YS Z) as buffer and YBCO as electrode, are prepared by using pulsed laser depo sition. The X-ray rocking curve scanning with respect to (001) reflection o f 6.0-mu m thick films exhibits the FWHM of only 0.6-0.7 degrees. Small gra in size and smooth surface of the as-prepared films were identified. The pe rformance of YSZ as excellent resisting layer against silicon diffusion was confirmed by the SIMS measurements. The electrical property evaluations de monstrated quite good ferroelectric property. A piezoelectric coefficient d (31) similar to -300 pC/N, acceptable for piezoelectric applications, was m easured. (C) 1999 Elsevier Science S.A. All rights reserved.