Transport phenomena in sublimation growth of SiC bulk crystals

Sublimation growth of SIC bulk crystals in the atmosphere of concentrated m ulti-component vapor is studied using a specially developed model of transp ort processes coupled with heterogeneous reactions at the source and the se ed surfaces. The convective and multi-component diffusion mechanisms of the gas phase transport, dependence of the pressure level inside the growth ch amber on the growth conditions, and kinetic jumps of the species partial pr essures at the Knudsen layers on the reactive surfaces are taken into accou nt in the model. The latter effect is described by introduction of novel bo undary conditions representing extension of the Hertz-Knudsen relationship for the case of multicomponent vapor. The results of calculations are shown to be in a good agreement with the available experimental data. (C) 1999 E lsevier Science S.A. All rights reserved.