Near-thermal equilibrium growth of SiC by physical vapor transport

Silicon carbide single crystals of the 4H-. 6H- and 15R- polytype are grown by using physical vapor transport (PVT). The crystal growth is performed a t conditions where the growth chamber is close to thermal equilibrium. Micr opipe-free growth of 6H-SiC on both the C- and Si-face of a 6H-SiC seed is demonstrated. 4H/15R bulk material has been grown on 4H-/15R-seeds, respect ively. The growth of 4H-/15R-SiC can not yet be stabilized for the entire b oule. Micropipe generation is observed in the neighborhood of polytype tran sitions, where Raman spectroscopy reveals internal stress. Nitrogen donor c oncentrations and concentrations of the compensation range from 5.9 x 10(17 ) to 1.5 x 10(18) cm(-3) and from 3 x 10(17) to 6 x 1017 cm(-1), respective ly. The maximum of the electron Hall mobility is about 200 cm(2) (Vs)(-1) ( 6H-SiC) and 300 cm(2) (Vs)-(1) (4H and 15R-SiC). (C) 1999 Elsevier Science S.A. All rights reserved.