Citation
M. Anikin et al., Influence of growth conditions on the defect formation in SiC ingots, MAT SCI E B, 61-2, 1999, pp. 73-76
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
73 - 76
Database
ISI
SICI code
0921-5107(19990730)61-2:<73:IOGCOT>2.0.ZU;2-W
Abstract
6H-SiC ingots with diameters of 25-35 mm with flat natural surfaces have be
en grown by the Modified Lely method. Influence of the growth conditions an
d crucible geometry on the growth front shape and on the enlargement of the
seeds have been investigated. The developed growth process allows the grow
th of ingots under quasi-equilibrium conditions with and without enlargemen
t at a growth rate between 1-1.5 mm h(-1). (C) 1999 Elsevier Science S.A. A
ll rights reserved.