Citation
Vp. Rastegaev et al., Features of SiC single-crystals grown in vacuum using the LETI method, MAT SCI E B, 61-2, 1999, pp. 77-81
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
77 - 81
Database
ISI
SICI code
0921-5107(19990730)61-2:<77:FOSSGI>2.0.ZU;2-C
Abstract
The growth of silicon carbide crystals in vacuum by the LETI method gives 6
H and 4H polytypes of n- and p-type conductivity. This is done by the appro
priate selection of construction material, doping conditions and crystallog
raphy orientation of the growing surface. (C) 1999 Elsevier Science S.A. Al
l rights reserved.