Modelling of SiC sublimation growth process: analyses of macrodefects formation

Authors
Chourou, K Anikin, M Bluet, JM Dedulle, JM Madar, R Pons, M Blanquet, E Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation
K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
82 - 85
Database
ISI
SICI code
0921-5107(19990730)61-2:<82:MOSSGP>2.0.ZU;2-N
Abstract
The influence of the temperature and its gradient on powder features and de fect formation is discussed in the light of experimental results in the phy sical vapour transport process. The recrystallization of the source powder during crystal growth appears to be directly related to the temperature gra dient field within the source material. Moreover, several calculations made on different experimental geometries of crucible show that the location of the macrodefects is strongly related to the temperature gradient in the cr ystal. Technical solutions in order to avoid or reduce the macrodefects for mation are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.