Citation
D. Chaussende et al., Thermodynamical calculations on the chemical vapour transport of silicon carbide, MAT SCI E B, 61-2, 1999, pp. 98-101
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
98 - 101
Database
ISI
SICI code
0921-5107(19990730)61-2:<98:TCOTCV>2.0.ZU;2-U
Abstract
We have performed thermodynamical calculations in order to oversee the pote
ntial of a new method for growing silicon carbide: the chemical vapour tran
sport process. In this way we have been able to select possible transportin
g agents and to show the nature of the deposits with varying parameters. (C
) 1999 Elsevier Science S.A. All rights reserved.