Optimization of sublimation growth of SiC bulk crystals using modeling

Authors
Ramm, MS Mokhov, EN Demina, SE Ramm, MG Roenkov, AD Vodakov, YA Segal, AS Vorob'ev, AN Karpov, SY Kulik, AV Makarov, YN
Citation
Ms. Ramm et al., Optimization of sublimation growth of SiC bulk crystals using modeling, MAT SCI E B, 61-2, 1999, pp. 107-112
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
107 - 112
Database
ISI
SICI code
0921-5107(19990730)61-2:<107:OOSGOS>2.0.ZU;2-O
Abstract
Analysis of factors determining growth rate and shape of the crystallizatio n front during sublimation growth of bulk SiC crystals is presented. For th is purpose, mass transport of species in the graphite crucible coupled with global heat transfer in a sublimation growth system is studied. Specific f eatures of the growth process in a tantalum container are discussed. (C) 19 99 Elsevier Science S.A. All rights reserved.