High temperature CVD growth of SiC

Two high temperature CVD techniques, respectively optimised for epitaxial a nd crystal growth, are presented. A chimney reactor has been developed for fast epitaxy, carried out at 1700-1900 degrees C, with growth rates ranging from 10 to 25 mu m h(-1), and a material quality close to conventional CVD processes. The growth of 4H-SiC epilayers with low n-type doping (10(14)-1 0(15) cm(-3)) and carrier lifetimes up to similar to 0.4 mu s is described, while the feasibility of high voltage Schottky rectifiers (1.8 kV) is demo nstrated. On the other side, developments of the stagnant flow HTCVD proces s, where growth is carried out at 2000-2300 degrees C, are shown to enable growth rates ranging from 0.3 up to 0.8 mm h(-1). The main characteristics of HTCVD grown SIC crystals (up to nearly 7 mm thick) are described. (C) 19 99 Elsevier Science S.A. All rights reserved.