Epitaxial growth of SiC in a single and a multi wafer vertical CVD system:a comparison.

First results about a new system suited for epitaxial growth on six 2' SiC- wafers at a time are presented in comparison to typical results in a single wafer CVD system. As expected, the multi wafer system today shows a by one order of magnitude higher background impurity level (less than or equal to 10(15) cm(-3) compared to less than or equal to 10(14) cm(-3)). On the oth er hand, the doping homogeneity is already very encouraging. The total vari ation on a 2 inch wafer is less than +/- 20% at about 1*10(16) cm(-3). The surface of the epitaxial layers is very smooth with a typical growth step h eight of 0.5 nm (4H 8 degrees off orientation). First measurements on Schot tky diodes show low leakage current values indicating low point defect dens ity in the epitaxial layers. (C) 1999 Elsevier Science S.A. All rights rese rved.