New results in sublimation growth of the SiC epilayers

Authors
Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Yagovkina, MA
Citation
Ns. Savkina et al., New results in sublimation growth of the SiC epilayers, MAT SCI E B, 61-2, 1999, pp. 165-167
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
165 - 167
Database
ISI
SICI code
0921-5107(19990730)61-2:<165:NRISGO>2.0.ZU;2-V
Abstract
In this work it has been shown that an optimized technology of sublimation epitaxial growth can be used to obtain structural perfection layers with co ncentration of uncompensated donors N-d-N-a similar to 1 x 10(15) cm(-3) an d the hole diffusion length of similar to 2.5 mu m. (C) 1999 Elsevier Scien ce S.A. All rights reserved.