Citation
An. Vorob'Ev et al., Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition, MAT SCI E B, 61-2, 1999, pp. 176-178
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
176 - 178
Database
ISI
SICI code
0921-5107(19990730)61-2:<176:MAOGPN>2.0.ZU;2-T
Abstract
An advanced mathematical model of SiC CVD process accounting for formation
and evolution of Si-droplets in the vapor phase is proposed. Effect of temp
erature on the nucleation process is considered. (C) 1999 Elsevier Science
S.A. All rights reserved.