Citation
Vv. Zelenin et al., Investigation of GH-SIC site competition epitaxy - the silane-methane-hydrogen gas system, MAT SCI E B, 61-2, 1999, pp. 183-186
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
183 - 186
Database
ISI
SICI code
0921-5107(19990730)61-2:<183:IOGSCE>2.0.ZU;2-3
Abstract
The homoepitaxial growth of 6H-SiC layers has been performed using methane
and silane as active gas sources. Voltage-capacitance measurements and resu
lts of i-DLTS spectroscopy characterized the epilayers. In accordance of th
e C/Si ratio in the gas phase the epitaxial layers exhibit n- or p-type con
ductivity. The dependence of N-D - N-A or N-A - N-D = F(Si/C) in uniutentio
nally doped layers is, as we suggest, connected with structural defects. (C
) 1999 Elsevier Science S.A. All rights reserved.