Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide atseven common laser pumping wavelengths

Authors
Sridhara, SG Eperjesi, TJ Devaty, RP Choyke, WJ
Citation
Sg. Sridhara et al., Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide atseven common laser pumping wavelengths, MAT SCI E B, 61-2, 1999, pp. 229-233
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
229 - 233
Database
ISI
SICI code
0921-5107(19990730)61-2:<229:PDITUF>2.0.ZU;2-E
Abstract
We report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900-2968 Angstrom. By using the known shift in the bandgap with temperature, we also present estimates of the absorpti on coefficient of 4H, 6H and 3C SIC at 2 K. A table is given for penetratio n depths at 300 and 2 K for seven common lasers used to pump SIC in this re gion. (C) 1999 Elsevier Science S.A. All rights reserved.