We have applied photoluminescence excitation spectroscopy of the free-excit
on related emission in 6H-SiC for studying the absorption edge. Detailed co
mparison with the conventional techniques, absorption measurements and wave
length modulated spectroscopy, is carried out, and our results are compared
with those obtained from these techniques. A qualitative model of the abso
rption mechanism is proposed in order to understand the appearance of peaks
in the PLE spectra. (C) 1999 Elsevier Science S.A. All rights reserved.