Kv. Vassilevski et al., Study of annealing conditions on the formation of ohmic contacts on p+4H-SiC layers grown by CVD and LPE, MAT SCI E B, 61-2, 1999, pp. 296-300
The quality of Al/Ti-based ohmic contacts formed on 4H-SiC films under vari
ous annealing conditions has been examined. Atmospheric, vacuum and high va
cuum environments as well as resistive, inductive and rapid thermal heating
have been used. Vacuum annealing resulted in non-oxidized contacts indepen
dent of the heating method. The ohmic contacts were fabricated on both high
ly doped (1 x 10(18) cm(-3)) CVD-grown and extremely high doped (> 1 x 10(2
0) cm(-3)) LPE-grown films. Reproducible and of low specific contact resist
ance (similar to 1 x 10(-4) Omega cm(2)) contacts were obtained only for th
e case of LPE-grown films. (C) 1999 Elsevier Science S.A. All rights reserv
ed.