Citation
Kv. Vassilevski et al., Study of annealing conditions on the formation of ohmic contacts on p+4H-SiC layers grown by CVD and LPE, MAT SCI E B, 61-2, 1999, pp. 296-300
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
296 - 300
Database
ISI
SICI code
0921-5107(19990730)61-2:<296:SOACOT>2.0.ZU;2-K
Abstract
The quality of Al/Ti-based ohmic contacts formed on 4H-SiC films under vari
ous annealing conditions has been examined. Atmospheric, vacuum and high va
cuum environments as well as resistive, inductive and rapid thermal heating
have been used. Vacuum annealing resulted in non-oxidized contacts indepen
dent of the heating method. The ohmic contacts were fabricated on both high
ly doped (1 x 10(18) cm(-3)) CVD-grown and extremely high doped (> 1 x 10(2
0) cm(-3)) LPE-grown films. Reproducible and of low specific contact resist
ance (similar to 1 x 10(-4) Omega cm(2)) contacts were obtained only for th
e case of LPE-grown films. (C) 1999 Elsevier Science S.A. All rights reserv
ed.