Citation
P. Thomas et al., Shallow and deep donors in transport properties of N-implanted 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 301-304
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
301 - 304
Database
ISI
SICI code
0921-5107(19990730)61-2:<301:SADDIT>2.0.ZU;2-J
Abstract
Transport properties of N-implanted 6H-SiC samples are studied between 30 a
nd 1000 K. The Hall effect and mobility behaviors are interpreted in the fr
amework of a two impurity level model. The temperature dependence of mobili
ty is calculated including all scattering processes which are of importance
for SiC in the studied temperature range. Our results show that the impuri
ty center associated with the hexagonal site behaves like a shallow level,
whereas that associated with the cubic site is well described by a localize
d state. (C) 1999 Elsevier Science S.A. All rights reserved.