The market of optoelectronic devices is continuously growing. Especially th
e development of hyper bright visible light emitting diodes (LEDs) leads in
to new applications such as automotive, signs and illumination. To serve th
ese markets, low cost production processes have to be developed. The spectr
al region of blue and green is realized using GaN based devices. Such devic
es suffer from the availability of high quality substrates such as SiC or;s
apphire. Due to its conductivity, SiC is at Siemens AG the substrate of cho
ice, even though it is quite expensive. On top of that, process control pla
ys an important role for GaInN. Since there are lots of new. unsolved physi
cal properties of this material, it becomes very important to overcome proc
ess related difficulties. One of the main problems is wavelength stability
for different operation currents. As can be shown, there are possibilities
to overcome these types of problems. (C) 1999 Elsevier Science S.A. All rig
hts reserved.