Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

Authors
Morrison, DJ Hilton, KP Uren, MJ Wright, NG Johnson, CM O'Neill, AG
Citation
Dj. Morrison et al., Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes, MAT SCI E B, 61-2, 1999, pp. 345-348
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
345 - 348
Database
ISI
SICI code
0921-5107(19990730)61-2:<345:AFICOT>2.0.ZU;2-Z
Abstract
The aim of this study was to improve the adhesion of Au Schottky contacts t o SiC. In order to do this, before the deposition of the Au layer, a thin l ayer of Ti was deposited. However, this resulted in an anomalous step in th e forward bias electrical characteristic for some diodes. An equivalent cir cuit model is introduced to explain this irregularity in terms of two barri er heights. PSPICE is used to simulate this model. Simulated and experiment al data are in good agreement over the temperature range 25 to 250 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.