Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC

The correlation of microstructural and electrical properties of Al-implante d 6H-SiC has been investigated with the aim of optimising the implantation and annealing parameters in order to achieve a higher electrical activation . Al was implanted using multiple energies and doses to form a 500 nm thick homogeneously doped layer with plateau concentrations between 5 x 10(19) a nd 5 x 10(21) cm(-3). Annealing was carried out using an inductively-heated furnace (up to 1750 degrees C, 10 min) as well as a short time annealing s et up (flash lamps, 2000 degrees C, 20 ms). A temperature of 400 degrees C was found to be the optimum implantation temperature. Using flash lamp anne aling it resulted in a hole concentration of 2 x 10(21) cm(-3). (C) 1999 El sevier Science S.A. All rights reserved.