Deep level defects in H+ implanted 6H-SiC epilayers and in silicon carbideon insulator structures

To investigate the origin of the high level of electrical compensation indu ced by hydrogen-implantation during the fabrication of SiCOI (Silicon Carbi de layer transferred On Insulator) structures we have performed a comparati ve investigation of the electrical and optical properties of, both, 6H-SiCO I structures and hydrogen-implanted 6H-SiC epitaxial layers. We have found that the high resistivity of SiCOI structures comes most probably from an e ffect of compensation by deep traps created during the implantation, rather than H-passivation of dopants. The D-1-center, observed by photoluminescen ce after the high temperature treatment, and the Z(1)/Z(2)-center or C-defe ct, observed by deep level transient capacitance spectroscopy, could be the signature of these compensating centers. (C) 1999 Elsevier Science S.A. Al l rights reserved.