Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes

Authors
Royet, AS Ouisse, T Billon, T Jaussaud, C Cabon, B
Citation
As. Royet et al., Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes, MAT SCI E B, 61-2, 1999, pp. 402-405
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
402 - 405
Database
ISI
SICI code
0921-5107(19990730)61-2:<402:ENUAAT>2.0.ZU;2-T
Abstract
We report the observation of random telegraph signals (RTS) occurring in th e forward regime of silicon carbide Schottky diodes. RTS noise is attribute d to the modulation of the conductivity either by the trapping/detrapping o f a single electron or by the switching of a bistable defect, in the neighb ourhood of a localized current path. Noise measurement is therefore a conve nient and non-destructive method for assessing the defectivity of SIC power diodes. (C) 1999 Elsevier Science S.A. All rights reserved.