Citation
M. Lades et al., Numerical simulation of implanted top-gate GH-SiC JFET characteristics, MAT SCI E B, 61-2, 1999, pp. 415-418
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
415 - 418
Database
ISI
SICI code
0921-5107(19990730)61-2:<415:NSOITG>2.0.ZU;2-1
Abstract
A detailed numerical analysis of implanted top-gate 6H-SiC JFET structures
was performed revealing the influence of a non-uniform channel doping profi
le. Based on structural parameters extracted from simulations of the device
characteristics at various bias conditions and temperatures, we obtain cha
nnel mobility parameters close to Hall data for bulk epitaxial layers. (C)
1999 Elsevier Science S.A. All rights reserved.