P-N Junction creation in 6H-SiC by aluminum implantation

Bipolar diodes, protected with junction termination extensions, were proces sed in 6H-SiC. A 5-fold aluminum implantation was carried out for the main p(+)-n junction creation, which led to the material amorphization. The recr ystallization variation with the annealing temperature and duration is exam ined in this paper. We performed the Al implantations with apposite energy orders, in order to study their influence on the diode electrical character istics. The increasing order led to a better forward conduction. and revers e leakage currents more important. (C) 1999 Elsevier Science S.A. All right s reserved.