On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction

This paper reports a parameter extraction method based on a new model for t he high frequency capacitance-voltage (C(V)) characteristics of 6H-SiC boro n compensated junctions. The C(V) model confirms the presence of two type r egions (p(-) and n(-)) in the quasi-intrinsic layer induced by boron compen sation. The extracted values of the net doping of these zones (6-10 x 10(12 ) cm(-3)) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, which is about twice the epila yer's width, proves the expansion of the quasi-intrinsic region in the subs trate. (C) 1999 Elsevier Science S.A. All rights reserved.