Current-voltage characteristics of large area 6H-SiC pin diodes

Recent improvements in SiC substrate and epilayer quality have enabled the fabrication of devices with high voltage blocking capabilities. Boron compe nsation of a n-type base layer is often used in pn high voltage SIC diodes. In the case of large area devices, defects causing premature breakdown com e into view. This paper reports 6H-SiC boron compensated (BC) pn junctions, having an experimental maximum breakdown voltage of 900 V for diodes with area up to 0.72 mm(2). The current-voltage (I-V) characteristics of the str uctures are modeled and characterized and comparison with similar but uncom pensated junctions is made. (C) 1999 Elsevier Science S.A. All rights reser ved.