Studies of the effect of proton irradiation on 6H-SiC pn junction properties

Authors
Lebedev, AA Strel'chuk, AM Kozlovski, VV Savkina, NS Davydov, DV Solov'ev, VV
Citation
Aa. Lebedev et al., Studies of the effect of proton irradiation on 6H-SiC pn junction properties, MAT SCI E B, 61-2, 1999, pp. 450-453
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
450 - 453
Database
ISI
SICI code
0921-5107(19990730)61-2:<450:SOTEOP>2.0.ZU;2-N
Abstract
The influence of proton irradiation on current-voltage characteristics, N-d -N-a values and parameters of deep centres in GI-I-SIC pn junctions has bee n studied. The irradiation was carried out with 8-MeV protons with doses fr om 10(14) to 10(16) cm(-2). Irradiation with a dose of 5.4 x 10(15) cm(-2) resulted in a very high resistance of forward-biased pn structures, remaini ng high even after anneling to 500 degrees C. It is suggested that proton i rradiation reduces the holes lifetime and increases the concentration of de ep centers, which leads to formation of an i-layer. (C) 1999 Elsevier Scien ce S.A. All rights reserved.