Mechanistic model for oxidation of SiC

Authors
Wright, NG Johnson, CM O'Neill, AG
Citation
Ng. Wright et al., Mechanistic model for oxidation of SiC, MAT SCI E B, 61-2, 1999, pp. 468-471
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
468 - 471
Database
ISI
SICI code
0921-5107(19990730)61-2:<468:MMFOOS>2.0.ZU;2-#
Abstract
A mechanistic model for the oxidation of SiC is presented. The model explai ns the observed anisotropic oxidation rate of SIC in terms of the effect of weakening/strengthening of SI-C bonds arising from the on-going incorporat ion of highly electronegative oxygen atoms into the crystal lattice. A nove l Monte Carlo based oxidation simulator, OXYSIM, is presented and used to e xplore the proposed SiC oxidation model. The extraction of key process metr ics (such as oxide thickness, interface roughness and oxide defect density) is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.