Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation

Authors
Bassler, M Pensl, G
Citation
M. Bassler et G. Pensl, Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation, MAT SCI E B, 61-2, 1999, pp. 490-492
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
490 - 492
Database
ISI
SICI code
0921-5107(19990730)61-2:<490:LCDIO6>2.0.ZU;2-4
Abstract
A long-time constant-capacitance deep level transient spectroscopy (LT-CC-D LTS) method has been established to investigate the energy distribution D-i t and the capture-cross-section sigma(n/p) of states at the interface of 6H SiC/MOS structures. A comparison of dry and wet oxidation (1120 degrees C) reveals a change in the distribution of interface states and a different m agnitude of capture-cross-sections indicating that the interface states con sist of at least two types of defects. (C) 1999 Elsevier Science S.A. All r ights reserved.