Design of a 600 V silicon carbide vertical power MOSFET

Authors
Planson, D Locatelli, ML Lanois, F Chante, JP
Citation
D. Planson et al., Design of a 600 V silicon carbide vertical power MOSFET, MAT SCI E B, 61-2, 1999, pp. 497-501
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
497 - 501
Database
ISI
SICI code
0921-5107(19990730)61-2:<497:DOA6VS>2.0.ZU;2-9
Abstract
Silicon carbide (SIC) owns very interesting properties to fulfil the requir ements of new power electronic applications. This paper reports the design of two vertical power MOSFETs, able to sustain a forward blocking voltage o f 600 V. In order to evaluate the performance, 2D-simulations were performe d taking into account the current technological constraints and the SiC mat erials parameters. (C) 1999 Elsevier Science S.A. All rights reserved.