The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface

Authors
Masri, P Moreaud, N Laridjani, MR Calas, J Averous, M Chaix, G Dollet, A Berjoan, R Dupuy, C
Citation
P. Masri et al., The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface, MAT SCI E B, 61-2, 1999, pp. 535-538
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
535 - 538
Database
ISI
SICI code
0921-5107(19990730)61-2:<535:TPOHO3>2.0.ZU;2-7
Abstract
We demonstrate that the S-correlated theory of misfit induced superstructur es and its continuity criteria, defined within the framework of the elastic ity theory, enables to predict the composition of buffer layers which can o ptimize the 3C-SiC/Si interface. The effect of incorporating Ge atoms to th e carbon source is investigated and the results are compared with the exper imental results. (C) 1999 Elsevier Science S.A. All rights reserved.