Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

This work combines the advantages of two techniques, MBE and LPCVD, to grow epitaxial 3C-SiC films on 2 in. Si (001) wafers misoriented 2-4 degrees to wards [110]. For comparison, SIC was also deposited on bare Si (001) wafers . The LPCVD process was performed in a hot-wall quartz reactor at temperatu res below 1200 degrees C using an organometallic compound, tetramethylsilan e, as a single precursor. The effect of the MBE buffer layer on the LPCVD S iC film quality has been investigated mainly by transmission electron micro scopy (TEM) and X-ray diffraction (XRD) techniques. The best LPCVD SiC film s were achieved at 1170 degrees C. These preliminary results show that the presence of the MBE carbonization layer improves the LPCVD subsequent growt h. The LPCVD SiC layer is highly sensitive to the quality of the buffer lay er. (C) 1999 Elsevier Science S.A. All rights reserved.