Influence of the heating ramp on the heteroepitaxial growth of SiC on Si

Authors
Cimalla, V Stauden, T Eichhorn, G Pezoldt, J
Citation
V. Cimalla et al., Influence of the heating ramp on the heteroepitaxial growth of SiC on Si, MAT SCI E B, 61-2, 1999, pp. 553-558
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
61-2
Year of publication
1999
Pages
553 - 558
Database
ISI
SICI code
0921-5107(19990730)61-2:<553:IOTHRO>2.0.ZU;2-K
Abstract
The influence of the heating rate on the initial growth of SiC on silicon b y carbonization was investigated for two strongly differing methods: solid source molecular beam epitaxy and rapid thermal chemical vapour deposition. An improvement of the structural and morphological properties can be obtai ned by a two dimensional nucleation stimulated by a defined heating cycle i n a (hydro-) carbon flux. This improvement is strongly associated with a de creased diffusion coefficient for silicon through the grown layer. (C) 1999 Elsevier Science S.A. All rights reserved.