CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure

In this paper we have investigated the CVD growth of 3C-SiC on SOI (100) su bstrates at reduced temperatures employing a carbonization step with a slow temperature heating-ramp. The carbonization leads to a rapid sealing of th e Si-top layer of the SOI substrate due to a high SIC nucleation density to tally avoiding the commonly reported formation of cavities at the 3C-SiC/Si interface. From TEM investigations it can be shown that the crystallinity of the 3C-SiC is comparable to state-of-the-art SIC thin films on Si. Explo iting this growth process 5 mu m thick 3C-SiC layers on Si (100) show excel lent crystal quality with a FWHM = 0.18 degrees derived from X-ray omega-ro cking curves. This is confirmed by electrical characterization using Hall m easurements. (C) 1999 Elsevier Science S.A. All rights reserved.