Citation
F. Namavar et al., Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition, MAT SCI E B, 61-2, 1999, pp. 571-575
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
61-2
Year of publication
1999
Pages
571 - 575
Database
ISI
SICI code
0921-5107(19990730)61-2:<571:IOPSAA>2.0.ZU;2-9
Abstract
Investigation of porous silicon as a new compliant substrate for hetero-epi
taxial deposition of 3C-SiC on silicon has been performed. The resulting la
yer has been analyzed in terms of X-ray diffraction, infrared reflectivity,
micro-Raman scattering and low temperature photoluminescence experiments.
From the results, intermediate properties between 3C-SiC deposited on bulk
silicon and 3C-SiC deposited on SIMOX have been found. (C) 1999 Elsevier Sc
ience S.A. All rights reserved.