Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer

A major issue in the heteroepitaxial growth of cubic silicon carbide (3C-Si C) is the stress generated by the lattice and thermal mismatch of the subst rate. The growth of beta SiC on ceramic (polycrystalline) SIC is reported h ere. This substrate is thermally matched to single crystal SIC and allows t he SIC to be grown at a temperature of 1500-1600 degrees C. Therefore, this substrate offers a significantly wider parameter space for optimization of cubic growth. In order to provide a crystalline template for growth, a nov el wafer bonding scheme was used to produce ultra thin Si layers, which wer e wafer bonded to the ceramic substrate. Using this technology, single crys tal Si layers less than 5 nm can be produced. It should be noted that the c eramic substrates are inexpensive and this technique is easily scaleable up to 8 in, in diameter. Using this material, the thin Si layer was carbonize d and 3C-SiC grown at temperatures of 1350 and 1550 degrees C. (C) 1999 Els evier Science S.A. All rights reserved.