0.35 mu m packed and 0.20 mu m isolated features have been printed with a p
ositive acting top-surface imaging process. The process consists of a bilay
er resist scheme, the top layer of which is a chemically amplified negative
resist. The latter, after exposure and post-exposure bake, is silylated in
the liquid phase and the latent positive images are resolved using an oxyg
en plasma etch. (C) 1999 Elsevier Science BN. All rights reserved.