Electrical resistivity anisotropy of Gd at high pressure

Citation
Ps. Balog et Ra. Secco, Electrical resistivity anisotropy of Gd at high pressure, PHYS ST S-B, 214(2), 1999, pp. 357-363
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
214
Issue
2
Year of publication
1999
Pages
357 - 363
Database
ISI
SICI code
0370-1972(199908)214:2<357:ERAOGA>2.0.ZU;2-K
Abstract
Measurements of electrical resistivity of single- and polycrystalline Gd we re performed in a large volume cubic anvil press in the h.c.p, phase region at room temperature up to 16 kbar. The anisotropy of electrical resistivit y of h.c.p. Gd, observed at room pressure and temperature, is maintained at elevated pressure for the entire h.c.p. range. When the low pressure depen dence of anisotropy is extrapolated to higher pressure beyond the stability region of the h.c.p. phase, the anisotropy disappears at approximately 205 kbar. The pressure-induced decrease in anisotropy is discussed in terms of related anisotropies of compressibility and the spin-disorder component of electrical resistivity.