Symmetry of excitons in GaN

Citation
R. Stepniewski et al., Symmetry of excitons in GaN, PHYS REV B, 60(7), 1999, pp. 4438-4441
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
7
Year of publication
1999
Pages
4438 - 4441
Database
ISI
SICI code
0163-1829(19990815)60:7<4438:SOEIG>2.0.ZU;2-1
Abstract
Magnetoreflectivity measurements on GaN are used to resolve the symmetry of three excitonic resonances, arising from the crystal-field and spin-orbit effects on the valence band. The symmetry characteristic for each valence s ubband is directly seen in the observed Zeeman pattern. The linear magnetic -field effect for all exciton components is well accounted for by introduci ng only two coupling constants: the electronic g factor for the conduction band and the Luttinger kappa parameter for the valence band. The strength o f the electron-hole exchange interaction is determined. [S0163-1829(99)0853 1-8].