Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

Authors
M'ghaieth, R Maaref, H Mihalcescu, I Vial, JC
Citation
R. M'Ghaieth et al., Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon, PHYS REV B, 60(7), 1999, pp. 4450-4453
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
7
Year of publication
1999
Pages
4450 - 4453
Database
ISI
SICI code
0163-1829(19990815)60:7<4450:AEATOO>2.0.ZU;2-R
Abstract
Time-resolved photoluminescence measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the na nosecond time-delayed photoluminescence (PL) in both cases, a new feature o f the PL spectra is identified: a fast red band, present both in fresh and aged samples. The nonlinear excitation intensity dependence of this compone nt is described by a simple model, where the Auger effect inside isolated s ilicon quantum dots plays the dominant role. [S0163-1829(99)03932-6].