Sv. Khare et al., Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001), PHYS REV B, 60(7), 1999, pp. 4458-4461
We report an ab initio study of the energetics and scanning tunneling micro
scopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimer
s on Si(001). As in the case of Si dimers on Si(001), we find for both syst
ems that the D dimer configuration, lying between the substrate dimer rows
and parallel to them, is highest in energy. Conversely, recent STM experime
nts for Si ad-dimers on Ge(001) deduce the D configuration to be most stabl
e. Our theoretical STM images for this system find that both the D and C co
nfigurations (the latter also between the rows) have similar STM images for
the experimental voltages. We propose an experimental test (low-bias STM i
maging) which would unambiguously distinguish between the D and C configura
tions. [S0163-1829(99)04631-7].