Ultrafast exciton dynamics in ternary II-VI semiconductor quantum wells

Citation
Mc. Netti et al., Ultrafast exciton dynamics in ternary II-VI semiconductor quantum wells, PHYS REV B, 60(7), 1999, pp. 4902-4906
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
7
Year of publication
1999
Pages
4902 - 4906
Database
ISI
SICI code
0163-1829(19990815)60:7<4902:UEDITI>2.0.ZU;2-L
Abstract
Ultrafast exciton dynamics is investigated in a high-quality ZnxCd1-xSe-ZnS e multiple quantum well at low photoexcited carrier density by means of a t wo-color femtosecond absorption saturation technique. Broadening of the exc iton Lines due to carrier photocreation is found to dominate the observed n onlinear response. Measurements performed as a function of the initial ener gy of the photoexcited carriers show that the dynamics of the induced broad ening strongly depends on the carrier distribution, suggesting that Pauli e xclusion principle effects significantly influence exciton broadening in te rnary quantum-well systems. Localized excitons are shown to modify the pico second nonlinear response, inducing a frequency shift of the absorption cha nge peak as the system approaches quasiequilibrium. [S0163-1829(99)00331-8] .