Planar self-interstitial in silicon

Authors
De Souza, MM Ngw, CK Shishkin, M Narayanan, EMS
Citation
Mm. De Souza et al., Planar self-interstitial in silicon, PHYS REV L, 83(9), 1999, pp. 1799-1801
Citations number
17
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
9
Year of publication
1999
Pages
1799 - 1801
Database
ISI
SICI code
0031-9007(19990830)83:9<1799:PSIS>2.0.ZU;2-R
Abstract
The aim of this paper is to demonstrate, for the first time, the possible e xistence of planar point defect silicon self-interstitials in the {311} pla ne. The results offer a plausible explanation as to why self-interstitials aggregate to form {311} defect clusters during ion implantation. These inte rstitials do not leave any dangling bonds and can be considered to be "exte nded," due to spread out perturbations.