K. Nakajima et al., Direct observation of intermixing at Ge/Si(001) interfaces by high-resolution Rutherford backscattering spectroscopy, PHYS REV L, 83(9), 1999, pp. 1802-1805
The initial stage of Ge/Si(001) epitaxial growth is studied with high-resol
ution Rutherford backscattering spectroscopy. In contrast to the generally
accepted picture, intermixing of Ge and Si begins before the first layer is
completed at the growth temperature of 500 degrees C. If the layer is depo
sited at room temperature, intermixing takes place during annealing at 300-
800 degrees C. These observations are in reasonable agreement with a recent
theoretical study based on generalized gradient approximation density func
tional calculations [Y. Yoshimoto and M. Tsukada, Surf. Sci. 423, 32 (1999)
].