Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112)

Authors
Erwin, SC Baski, AA Whitman, LJ Rudd, RE
Citation
Sc. Erwin et al., Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112), PHYS REV L, 83(9), 1999, pp. 1818-1821
Citations number
7
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
9
Year of publication
1999
Pages
1818 - 1821
Database
ISI
SICI code
0031-9007(19990830)83:9<1818:FMOVIO>2.0.ZU;2-B
Abstract
We develop an exactly solvable microscopic model for analyzing the strain-m ediated interaction of vacancy lines in a pseudomorphic adsorbate system. T he model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good a greement with experimental observations, reveal an unexpectedly complex int erplay between compressive and tensile strain within the mixed Ga-Si surfac e layer.