Instability of an elastically compressed silicon surface under etching

An unusual relief in the form of linear defects resembling quasicracks or g rooves was observed on a compressionally stressed surface of a bent silicon surface subjected to chemical etching. The average distance between the fo rming defects was determined by the magnitude of the surface mechanical str ain. The reason for this is assumed to be an Asaro-Tiller-Srolovitz instabi lity in the compressed-surface-etching-agent system. A simple technique is proposed for producing considerable mechanical strains, up to 0.5%, in a si licon surface at room temperature. (C) 1999 American Institute of Physics. [S1063-7834(99)01308-8].